Microscopic defect induced slow-mode degradation in II–VI based blue–green laser diodes
- 1 June 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 214-215, 1035-1039
- https://doi.org/10.1016/s0022-0248(00)00267-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Influence of p-type doping on the degradation of ZnSe laser diodesApplied Physics Letters, 1999
- Persistent Photoconductivity (PPC) and Related Deep Metastable Center in MBE Grown p-Type ZnMgSSeJapanese Journal of Applied Physics, 1998
- Significant progress in II-VI blue-green laser diodelifetimeElectronics Letters, 1998
- Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxyApplied Physics Letters, 1993
- Blue-green laser diodesApplied Physics Letters, 1991
- Mechanism for radiation resistance of InP solar cellsJournal of Applied Physics, 1988
- Recombination enhanced defect reactionsSolid-State Electronics, 1978