Deep hole trap properties of p-type ZnSe grown by molecular beam epitaxy
- 12 July 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (2) , 191-193
- https://doi.org/10.1063/1.110396
Abstract
The characteristics of deep hole traps in p‐type ZnSe are studied by means of a transient capacitance spectroscopy technique. p‐type ZnSe layers were grown by molecular beam epitaxy using radical N2 (nitrogen) doping. A major deep hole trap with a thermal hole activation energy of ΔE=720±30 meV is detected for two different sample structures: (a) n+‐p ZnSe diodes and (b) Au‐p ZnSe double‐Schottky diodes. The trap concentration tends to increase as the net acceptor (N) concentration increases. The deep hole trap has revealed an exponential temperature dependence of hole capture rates, indicating a strong electron‐lattice coupling in carrier capture/emission processes.Keywords
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