Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions
- 1 June 2001
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (11) , 6745-6747
- https://doi.org/10.1063/1.1357832
Abstract
We have observed very large tunneling magnetoresistance (TMR) in ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of 〈100〉, which is induced by the zincblende-type
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