Instability of nanocavities in amorphous silicon
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2313-2315
- https://doi.org/10.1063/1.123835
Abstract
This letter demonstrates that, whereas nanocavities are quite stable in crystalline Si (c-Si), they are unstable in amorphous Si (a-Si). This behavior is illustrated by introducing a band of nanocavities into c-Si by H implantation, followed by annealing at 850 °C. Amorphization of the c-Si surrounding the nanocavities led to their disappearance. Transmission electron microscopy, Rutherford backscattering, and channeling and time resolved (optical) reflectivity were used to provide details of the cavity instability process by studying the amorphous Si after implantation and subsequent crystallization. Two possible reasons are suggested for the instability of nanocavities in a-Si.Keywords
This publication has 14 references indexed in Scilit:
- Depth profiling of vacancy clusters in MeV-implanted Si using Au labelingApplied Physics Letters, 1998
- Novel beam effect: mass transport due to the lateral component of the ion momentumNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Gettering of Au to dislocations and cavities in siliconApplied Physics Letters, 1995
- Gettering of copper to hydrogen-induced cavities in siliconApplied Physics Letters, 1995
- Binding of Copper and Nickel to Cavities in Silicon Formed by Helium Ion ImplantationMRS Proceedings, 1993
- Stress and plastic flow in silicon during amorphization by ion bombardmentJournal of Applied Physics, 1991
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- Diffusion, Solubility and Segregation of Implanted Cu, Ag and Au in Amorphous SiMRS Proceedings, 1986
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Optical properties determination at 10.6 ?m of thin semiconducting layersApplied Physics A, 1983