Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling
- 16 November 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (20) , 2980-2982
- https://doi.org/10.1063/1.122650
Abstract
A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This technique takes advantage of the fact that metal impurities, such as Au, are trapped in the region of excess vacancies produced by MeV Si implants into silicon. In this work, the clustered-vacancy regions produced by 1-, 2-, and 8-MeV Si implants into silicon have been labeled with Au diffused in from the front surface at 750 °C. The trapped Au was profiled with Rutherford backscattering spectrometry. The dynamics of the clustered-vacancy region were monitored for isochronal annealing at 750–1000 °C, and for isothermal annealing at 950 °C, for 10–600 s. Cross-sectional transmission electron microscopy analysis revealed that after the drive-in anneal, the Au in the region of vacancy clusters is in the form of precipitates. The results demonstrate that the Au-labeling technique offers a convenient and potentially quantitative tool for depth profiling vacancies in clusters.Keywords
This publication has 15 references indexed in Scilit:
- Impurity gettering to secondary defects created by MeV ion implantation in siliconJournal of Applied Physics, 1998
- Metallic Impurity Gettering in MeV Implanted SiSolid State Phenomena, 1997
- Evolution from point to extended defects in ion implanted siliconJournal of Applied Physics, 1997
- Transient enhanced diffusion of Sb and B due to MeV silicon implantsApplied Physics Letters, 1997
- Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV ImplantationMRS Proceedings, 1997
- The effect of series resistance on threshold voltage measurement techniques for fully depleted SOI MOSFETsSolid-State Electronics, 1996
- Implantation of si under extreme conditions: The effects of high temperature and dose on damage accumulationJournal of Electronic Materials, 1996
- MeV-ion-induced damage in Si and its annealingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1991
- Proximity gettering with mega-electron-volt carbon and oxygen implantationsApplied Physics Letters, 1988
- Direct comparison of ion−damage gettering and phosphorus−diffusion gettering of Au in SiJournal of Applied Physics, 1975