Ni ∕ Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
- 7 August 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (6)
- https://doi.org/10.1063/1.2236104
Abstract
The effect of Ni∕Au metal contact on the carrier injection and the electroluminescence of silicon quantum dot light-emitting diodes (LEDs) was investigated. An LED with an annealed Ni∕Au contact at 400°C in air showed a lower threshold voltage compared to that of an as-deposited Ni∕Au contact by forming a nickel silicide, which has a lower work function than Ni at the interface between metal layers and silicon nitride. The optical output power of the LED with the annealed Ni∕Au contact was also increased due to a highly transparent NiO layer and a lowly resistant Au layer.Keywords
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