1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (6) , 385-387
- https://doi.org/10.1109/68.56594
Abstract
The large differential quantum efficiency eta /sub df/ with one-directional output operation obtained in 1.5- mu m distributed reflector (DR) lasers using a thin active layer of 50 nm and the separate-confinement heterostructure (SCH) structure is discussed. eta /sub df/ of the DR laser was experimentally determined to be twice that of distributed-feedback (DFB) lasers cleaved from the same wafer, which indicates high efficiency and high power characteristics of DR lasers.<>Keywords
This publication has 3 references indexed in Scilit:
- 1.5 μm GaInAsP/InP distributed reflector (DR) laser with high-low reflection grating structureElectronics Letters, 1989
- Single-mode properties of distributed-reflector lasersIEEE Journal of Quantum Electronics, 1989
- Novel single-longitudinal-mode 1.5 μm GaInAsP/InP distributed reflector (DR) laserElectronics Letters, 1988