Terahertz frequency response of an In0.53Ga0.47As/AlAs resonant-tunneling diode
- 11 April 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15) , 1995-1997
- https://doi.org/10.1063/1.111717
Abstract
We have measured the room‐temperature, broad‐band, terahertz response of a high‐speed In0.53Ga0.47As/AlAs resonant‐tunneling diode from 120 GHz to 3.9 THz using the free‐electron lasers at UCSB. The ‘‘rectified’’ response is measured with a conventional probe station by using the tungsten probe tip as a whisker antenna. Normalizing the rectified response in the resonant‐tunneling regime with the off‐resonant response we remove the extrinsic frequency dependence controlled by the antenna and the RC time constant and measure an intrinsic relaxation time.Keywords
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