New native oxide of InP with improved electrical interface properties
- 10 November 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1281-1283
- https://doi.org/10.1063/1.97386
Abstract
The electrical properties of InP insulator interface were improved by using a new native oxide between gate insulator and the semiconductor. This phosphorus‐rich oxide identified as In(PO3)y polyphosphate was grown anodically. Capacitance‐voltage measurements on this metal‐insulator‐semiconductor structure yielded an interface state density as low as 4×1010 cm−2 eV−1 and were nearly free of hysteresis in the depletion and accumulation region.Keywords
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