A W-band InAs/AlSb low-noise/low-power amplifier
- 11 April 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 15 (4) , 208-210
- https://doi.org/10.1109/lmwc.2005.845691
Abstract
The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm/sup 2/ three-stage co-planar waveguide amplifier with 0.1-/spl mu/m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-/spl mu/m GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.Keywords
This publication has 8 references indexed in Scilit:
- An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifierIEEE Microwave and Wireless Components Letters, 2004
- Antimonide-based high-speed electronics: a transistor perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Metamorphic AlSb/InAs HEMT for low-power, high-speed electronicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- W-band MMIC direct detection receiver for passive imaging systemPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Geosynchronous space based radar concept development for theater surveillancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Large scale W-band focal plane array for passive radiometric imagingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlSb/InAs HEMT's for low-voltage, high-speed applicationsIEEE Transactions on Electron Devices, 1998
- An InAs channel heterojunction field-effect transistor with high transconductanceIEEE Electron Device Letters, 1990