An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier
- 4 May 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 14 (4) , 156-158
- https://doi.org/10.1109/lmwc.2004.827132
Abstract
The first antimonide-based compound semiconductor (ABCS) MMIC, a Ka-Band low-noise amplifier using 0.25-μm gate length InAs/AlSb metamorphic HEMTs, has been fabricated and characterized on a 75 μm GaAs substrate. The compact 1.1 mm 2 three-stage Ka-band LNA demonstrated an average of 2.1 dB noise-figure between 34-36 GHz with an associated gain of 22 dB. The measured dc power dissipation of the ABCS LNA was an ultra-low 1.5 mW per stage, or 4.5 mW total. This is less than one-tenth the dc power dissipation of a typical equivalent InGaAs/AlGaAs/GaAs HEMT LNA. Operation with degraded gain and noise figure at 1.1 mW total dc power dissipation is also verified. These results demonstrate the outstanding potential of ABCS HEMT technology for mobile and space-based millimeter-wave applications.Keywords
This publication has 7 references indexed in Scilit:
- InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Ultra low power low noise amplifiers for wireless communicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Geosynchronous space based radar concept development for theater surveillancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlSb/InAs HEMT's for low-voltage, high-speed applicationsIEEE Transactions on Electron Devices, 1998
- High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTsIEEE Microwave and Guided Wave Letters, 1996
- A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technologyIEEE Microwave and Guided Wave Letters, 1993
- A high-performance monolithic Q-band InP-based HEMT low-noise amplifierIEEE Microwave and Guided Wave Letters, 1993