Frequency dependent characteristics in an ion-implanted photo MESFET
- 1 January 1987
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 30 (1) , 113-118
- https://doi.org/10.1016/0038-1101(87)90039-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Optically controlled characteristics in an ion-implanted silicon MESFETSolid-State Electronics, 1986
- Measurement and simulation of GaAs FET's under electron-beam irradiationIEEE Transactions on Electron Devices, 1983
- Microwave Characteristics of an Optically Controlled GaAs MESFETIEEE Transactions on Microwave Theory and Techniques, 1983
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977