Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
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- 26 May 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. 58 (2) , 271-276
- https://doi.org/10.1109/tr.2009.2020134
Abstract
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capacitance-voltage (C-V) measurements as a result of trapped charge in the gate oxide. The collector-emitter ON voltage VCE(ON) showed a reduction with aging. The reduction in the VCE(ON) was found to be correlated to die attach degradation, as observed by scanning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor parameters will enable the development of a prognostic methodology for IGBT failure. The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.Keywords
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