Schottky barriers on atomically clean cleaved GaAs
- 31 March 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (3) , 307-312
- https://doi.org/10.1016/0038-1101(85)90011-5
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interfaceApplied Physics Letters, 1984
- Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110)Physical Review B, 1983
- Chemisorption-induced defects at interfaces on compound semiconductorsSurface Science, 1983
- Microscopic investigations of semiconductor interfacesSolid-State Electronics, 1983
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982
- Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compoundsThin Solid Films, 1982
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiationPhysical Review B, 1978
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976
- Contact potential differences for III–V compound surfacesJournal of Vacuum Science and Technology, 1976