Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)TiO3 Capacitors for Future Dynamic Random Access Memories

Abstract
Ru films were fabricated by chemical vapor deposition using Ru(C5H5)2 and O2. The deposition of Ru film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250°C and by the mass transport process above 250°C. Ru films had a polycrystalline structure and showed low resistivity of about 12 µΩcm. Ru films deposited at 230°C showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba0.25Sr0.75TiO3 capacitor and obtained good electrical characteristics.