MOS structure with a P+P profile
- 16 February 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 33 (2) , 661-671
- https://doi.org/10.1002/pssa.2210330226
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electrical characteristics of boron-implanted n-channel MOS transistorsSolid-State Electronics, 1974
- Threshold voltage of nonuniformly doped MOS structuresSolid-State Electronics, 1973
- Decrease of FET threshold voltage due to boron depletion during thermal oxidationSolid-State Electronics, 1971
- Influence de la réduction de mobilite due au champ transversal sur les caractéristiques des transistors m.o.s. (Influence on the characteristics of m.o.s. transistors of the mobility reduction due to a transverse electric fieldElectronics Letters, 1969
- Approximations for accumulation and inversion space-charge layers in semiconductorsSolid-State Electronics, 1968