A theoretical interpretation of the electrical behaviour of individual edge dislocations in Si as determined by combined EBIC/TEM studies
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (2) , 137-146
- https://doi.org/10.1002/crat.19810160204
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Minority-carrier diffusion coefficients in highly doped siliconApplied Physics Letters, 1979
- Recombination at dislocationsSolid-State Electronics, 1978
- V. A two stage model for deep level capturePhilosophical Magazine, 1977
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Some recent fundamental advances in radiative and nonradiative transitions in semiconductorsJournal of Luminescence, 1976
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Bound Electron States in the Strain Field of a 60° Dislocation in GermaniumPhysica Status Solidi (b), 1974
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954