DC and AC characterization of grain boundaries in float zone silicon
- 16 April 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 106 (2) , 535-549
- https://doi.org/10.1002/pssa.2211060225
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Electronic Properties of Grain BoundariesPublished by Springer Nature ,1985
- Effects of interface-potential nonuniformities on carrier transport across silicon grain boundariesJournal of Applied Physics, 1983
- Electron tunneling through GaAs grain boundariesApplied Physics Letters, 1982
- A method to extract interface state parameters from the MIS parallel conductance techniqueSolid-State Electronics, 1973
- Grain Boundary States in Silicon and GermaniumJapanese Journal of Applied Physics, 1963