Structure, Stability, and Origin of () Phases on Si(100)
- 5 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (18) , 1936-1939
- https://doi.org/10.1103/physrevlett.56.1936
Abstract
Phases with () structure () can be formed on Si(100) by rapid quenching from high temperatures. The nominal (2×7) phase has been investigated by high-resolution low-energy electron diffraction. The structure involves two atomic levels, is metastable, and decays with first-order kinetics. The structure can be explained by ordering of excess missing-dimer defects, which apparently are present on the surface with any of the standard surface preparation techniques for Si(100).
Keywords
This publication has 5 references indexed in Scilit:
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