Polar optical-phonon scattering mobility in semiconductor quantum wells
- 15 May 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (10) , 7288-7290
- https://doi.org/10.1103/physrevb.33.7288
Abstract
The mobility of the two-dimensional electron gas in a quantum well due to polar optical-phonon scattering is obtained by the numerical iterative solution of the Boltzmann equation. The temperature and the concentration dependences of mobility are studied for narrow as well as thick wells. The calculations show that the mobility in a thick well at low concentrations is greater than that in the bulk.Keywords
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