Surface-Charge Transport in a Multielement Charge-Transfer Structure
- 1 May 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (5) , 2277-2285
- https://doi.org/10.1063/1.1661492
Abstract
A two‐phase 14‐stage transfer shift register has been built and operated which uses the surface‐charge transistorstructure to effect the transfer of signal charge from one stage to the next. This paper describes the structure and presents preliminary experimental results which characterize its operation as a digital shift register. The shift register is operated in both the complete and partial transfer modes. An analytical solution for the approximate equation of motion of charge under a single electrode plate has been obtained. A key result of the analytical solution is that the characteristic time for transfer of charge out of a full potential well is given by t 0=L 2/μ(V‐VT ). A computer simulation of the 14‐stage shift register, using the analytical solution for a single stage, is in good agreement with the experimental results.This publication has 8 references indexed in Scilit:
- The surface-charge transistorIEEE Transactions on Electron Devices, 1971
- Drift-aiding fringing fields in charge-coupled devicesIEEE Journal of Solid-State Circuits, 1971
- The P-channel refractory metal self-registered MOSFETIEEE Transactions on Electron Devices, 1971
- Charge Transfer in Charge-Coupled DevicesJournal of Applied Physics, 1971
- A Nonlinear Diffusion Analysis of Charge-Coupled-Device TransferBell System Technical Journal, 1971
- SURFACE CHARGE TRANSPORT IN SILICONApplied Physics Letters, 1970
- CHARGE COUPLED 8-BIT SHIFT REGISTERApplied Physics Letters, 1970
- Experimental Verification of the Charge Coupled Device ConceptBell System Technical Journal, 1970