RBS/Channelinc and Tem Analysis of Thin Sandwiched EPI-Layers of Germanium on Silicon

This publication has 12 references indexed in Scilit:

• Substrate and capping layer effects on the phonon spectrum of ultrathin superlattices
  Applied Physics Letters, 1988
• Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocations
  Applied Physics Letters, 1988
• Critical Stresses forSixGe1−xStrained-Layer Plasticity
  Physical Review Letters, 1987
• Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling
  Physical Review Letters, 1987
• Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices
  Applied Physics Letters, 1986
• Channeling analysis of strain in superlattices
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Catastrophic planar dechanneling in strained-layer superlattices
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures
  Applied Physics Letters, 1985
• A GaAsxP1−x/GaP strained-layer superlattice
  Applied Physics Letters, 1982
• Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
  Thin Solid Films, 1977