SiC growth in tantalum containers by sublimation sandwich method
- 1 November 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 181 (3) , 254-258
- https://doi.org/10.1016/s0022-0248(97)00282-0
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanismCrystal Research and Technology, 1981
- Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuumCrystal Research and Technology, 1979
- Growth Characteristics of Alpha-Silicon CarbideJournal of the Electrochemical Society, 1971
- Inclusion of Small Carbon Particles in SiC Crystal Prepared by Sublimation MethodJournal of the Ceramic Association, Japan, 1970