InGaAlAs-InP quantum-well infrared photodetectors for 8-20-μm wavelengths
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 34 (10) , 1873-1876
- https://doi.org/10.1109/3.720221
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectorsPublished by SPIE-Intl Soc Optical Eng ,1998
- Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detectionApplied Physics Letters, 1997
- Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum wellIEEE Journal of Quantum Electronics, 1994
- Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1994
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- Lattice-matched InGaAsP/InP long-wavelength quantum well infrared photodetectorsApplied Physics Letters, 1992
- InGaAs/InP long wavelength quantum well infrared photodetectorsApplied Physics Letters, 1991
- GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorptionApplied Physics Letters, 1990
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam MethodJapanese Journal of Applied Physics, 1986
- Compositional dependence of band-gap energy and conduction-band effective mass of In1−x−yGaxAlyAs lattice matched to InPApplied Physics Letters, 1982