Band lineup and in-plane effective mass of InGaAsP or InGaAlAs on InP strained-layer quantum well
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (2) , 562-570
- https://doi.org/10.1109/3.283804
Abstract
No abstract availableKeywords
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