Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double-heterostructure lasers and lateral p-n junction arrays
- 23 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17) , 1691-1693
- https://doi.org/10.1063/1.103119
Abstract
In this letter we show that the orientation dependence of dopant incorporation can be used to obtain lateral patterning of doping by growing on nonplanar substrates. Specifically, organometallic chemical vapor deposition has been used to obtain lateral p‐n junction arrays and selective deposition of alternating p‐n layers of InP. The latter technique has been used to grow double‐heterostructure lasers with current confinement layers in a single step.Keywords
This publication has 11 references indexed in Scilit:
- Hydrogen passivation effect in Si molecular beam epitaxyApplied Physics Letters, 1989
- Design of guided-wave components using growth of GaAs/AlGaAs superlattices on patterned substrates by organometallic chemical vapor depositionApplied Physics Letters, 1989
- Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguidesJournal of Crystal Growth, 1988
- Buried GaInAs/InP layers grown on nonplanar substrates by one-step low-pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Growth behavior during nonplanar metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasersJournal of Crystal Growth, 1988
- Orientation dependence of GaAs growth in low-pressure OMVPEJournal of Crystal Growth, 1987
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructuresApplied Physics Letters, 1985
- Mechanism of carbon incorporation in MOCVD GaAsJournal of Crystal Growth, 1984