Occupation statistics of dislocation deep levels in III-V compounds

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Abstract
Making use of the dielectric function of the material one calculates, in a very simple way, the energy corresponding to the electrostatic interaction of carriers trapped along a line of periodically spaced sites (e.g., a dislocation). A qualitative discussion of possible dislocation cores permits a representation of two situations which should correspond roughly to the actual cases of ’’60°’’ and ’’screw’’ dislocations. Calculations are carried out numerically self-consistently. Results are presented for n, p, and compensated InSb.

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