Nonrandom doping and elastic scattering of carriers in semiconductors
- 6 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (10) , 940-942
- https://doi.org/10.1063/1.100814
Abstract
High-density delta doping of semiconductors may result in partial ordering of dopant atoms. Under suitable circumstances, periodic delta doping leads to significant suppression of elastic scattering and a consequent enhancement in charge carrier mobility.Keywords
This publication has 6 references indexed in Scilit:
- Scaling ‘ballistic’ heterojunction bipolar transistorsElectronics Letters, 1988
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Nonequilibrium electron transport in bipolar devicesApplied Physics Letters, 1987
- Electron scattering by ionized impurities in semiconductorsReviews of Modern Physics, 1981
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- Quantum Theory of Electrical Transport PhenomenaPhysical Review B, 1957