Stacking fault structures in carbon-contaminated low-temperature epitaxial silicon
- 16 November 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 26 (1) , 135-146
- https://doi.org/10.1002/pssa.2210260112
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Shockley loops in epitaxial siliconPhysica Status Solidi (a), 1972
- Silicon homoepitaxial thin films via silane pyrolysis: A HEED and Auger electron spectroscopy studySurface Science, 1972
- The dissociation of dislocations in siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971
- The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon filmsSurface Science, 1969
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques I.—experimental methodsPhilosophical Magazine, 1966
- Useful Properties of Dark‐Field Electron ImagesPhysica Status Solidi (b), 1965
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Electron Microscopic Images of Single and Intersecting Stacking Faults in Thick Foils. Part I: Single FaultsPhysica Status Solidi (b), 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Edge Dislocations in Inhomogeneous MediaProceedings of the Physical Society. Section B, 1953