Inductively coupled plasma-induced etch damage of GaN p-n junctions
- 1 July 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 18 (4) , 1139-1143
- https://doi.org/10.1116/1.582313
Abstract
Plasma-induced etch damage can degrade the electrical and optical performance of III–V nitride electronic and photonic devices. We have investigated the etch-induced damage of an inductively coupled plasma(ICP)etch system on the electrical performance of mesa-isolated GaNpn-junction diodes. GaN positive-insulating-negative mesa diodes were formed by Cl 2 /BCl 3 /Ar ICPetching under different plasma conditions. The reverse leakage current in the mesa diodes showed a strong relationship to chamber pressure, ion energy, and plasma flux. Plasma induced damage was minimized at moderate flux conditions (⩽500 W), pressures ⩾2 mTorr, and at ion energies below approximately −275 V.This publication has 27 references indexed in Scilit:
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