Theoretical studies of interface Si(111)-Ge and Ge (111)-Si
- 1 July 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 47 (2) , 93-96
- https://doi.org/10.1016/0038-1098(83)90616-6
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Structure and electronic properties of cleaved Si(111) upon Ge adsorptionSolid State Communications, 1982
- Interface structure of epitaxial Ge–Si(111) system studied by high energy ion scatteringJournal of Vacuum Science and Technology, 1982
- Pseudomorphic Structure at the Interface of Ge on Si(111) Studied by High-Energy-Ion ScatteringPhysical Review Letters, 1981
- Low energy electron loss spectroscopy of Si–Ge interfacesJournal of Vacuum Science and Technology, 1981
- Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interfaceSolid State Communications, 1980
- Microscopic aspects of Si-Ge heterojunction formationSolid State Communications, 1980
- A PRELIMINARY STUDY ON THE RELAXATION OF Si(111) SURFACE ATOMSActa Physica Sinica, 1980
- Surface structures of GaAs(110)Journal of Vacuum Science and Technology, 1980
- Cohesive energy of the two-dimensional Si(111)3 × 1 Ag and Si(111)√3-R(30°)Ag phases of the Silver (deposit)-silicon(111) (substrate) systemSurface Science, 1978
- Surface reactions of silicon with aluminum and with indiumSurface Science, 1964