Microscopic investigation of the band discontinuities at the silicon-germanium heterojunction interface
- 31 October 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (3) , 215-217
- https://doi.org/10.1016/0038-1098(80)90263-x
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Polar heterojunction interfacesPhysical Review B, 1978
- Ge–GaAs(110) interface formationJournal of Vacuum Science and Technology, 1978
- Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAsPhysical Review Letters, 1978
- Electronic structure of the GeGaAs (111) and () heterojunctionsSolid State Communications, 1977
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Elementary theory of heterojunctionsJournal of Vacuum Science and Technology, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Problems in the theory of heterojunction discontinuitiesC R C Critical Reviews in Solid State Sciences, 1975
- Near-IR detection by PbS-GaAs heterojunctionsPhysica Status Solidi (a), 1973
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962