Microscopic aspects of Si-Ge heterojunction formation
- 31 May 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 34 (6) , 409-412
- https://doi.org/10.1016/0038-1098(80)90638-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Angle-resolved photoemission measurements of band discontinuities in the GaAs-Ge heterojunctionApplied Physics Letters, 1978
- Ge–GaAs(110) interface formationJournal of Vacuum Science and Technology, 1978
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Electronic structure and atomic configuration at the cleavage surface of zincblende compoundsJournal of Physics C: Solid State Physics, 1977
- Coupled Interface Plasmons of Al Films on CdSe and CdSPhysical Review Letters, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Atomic densities of states near Si (111) surfacesPhysical Review B, 1976
- Low-energy-electron-loss spectroscopy of Ge surfacesPhysical Review B, 1976
- Diffuse X‐Ray Determination of the Energy of Mixing and Elastic Constants of Ge-Si Solid SolutionsPhysica Status Solidi (b), 1974
- Electron Energy-Loss Spectroscopy of GaAs and Ge SurfacesPhysical Review Letters, 1974