Specific resistivity of a metal-n GaAs OHMIC contact with an intermediate N+ layer
- 1 January 1985
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 25 (5) , 837-840
- https://doi.org/10.1016/s0026-2714(85)80006-8
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Ohmic contacts to GaAsThin Solid Films, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- The role of germanium in evaporated AuGe ohmic contacts to GaAsSolid-State Electronics, 1983
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Ultra low resistance ohmic contacts to n -GaAsElectronics Letters, 1979
- Ohmic contacts on ion-implanted n-type GaAs layersJournal of Applied Physics, 1979
- Nonalloyed and i n s i t u Ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistorsJournal of Applied Physics, 1979
- A review of the theory, technology and applications of metal-semiconductor rectifiersThin Solid Films, 1978
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975