Annealing of damage and redistribution of Cr in boron-implanted Si3N4-capped GaAs
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5) , 447-449
- https://doi.org/10.1063/1.91734
Abstract
Transmission electron microscopy and secondary‐ion mass spectrometry have been used to determine the relative roles of encapsulant stress and implantation damage in the thermal redistribution of chromium. At low temperatures (500 °C), there is a plantation damage, while the encapsulant stress becomes predominant at higher temperatures.Keywords
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