Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of Silicon
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Raman scattering with nanosecond resolution during pulsed laser annealing of siliconApplied Physics Letters, 1982
- Melting model and Raman scattering during pulsed laser annealing of ion-implanted siliconApplied Physics Letters, 1982
- Time-reversal invariance and Raman measurements of phonon populations under nonequilibrium conditionsPhysical Review B, 1982
- Macroscopic theory of pulsed-laser annealing. I. Thermal transport and meltingPhysical Review B, 1981
- Pulsed Raman measurement of the onset of recrystallization in laser annealingApplied Physics Letters, 1981
- Raman Measurement of Lattice Temperature during Pulsed Laser Heating of SiliconPhysical Review Letters, 1980