Melting model and Raman scattering during pulsed laser annealing of ion-implanted silicon

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Abstract
Compaan and coworkers have reported the results of Raman scattering experiments on ion- implanted Si which they claim disprove the melting model of pulsed laser annealing. These results concern the onset of a Raman signal after an intense laser pulse, the simultaneous occurrence of a Raman signal and a high reflectivity phase characteristic of molten Si, and the lattice temperature measured by Raman scattering. It is shown here that there is, in fact, good agreement between the experimental results and the predictions of the melting model.