Raman scattering study of [hhk]-GaAs/(Si or CaF2) strained heterostructures
- 1 September 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (5) , 2773-2780
- https://doi.org/10.1063/1.357542
Abstract
Raman spectroscopy is used to measure the frequency shift, symmetry, and activity of long-wavelength optical phonons in several GaAs strained epilayers. The results are compared with theoretical evaluations using the elastic compliances, phonon deformation potentials, and Raman tensors. The effect of growth direction ([001], [111], and [112]) and the substrate nature (Si or CaF2) is analyzed. The importance of nonstandard growth directions, [111] or [112], on residual stress and piezoelectric effect is discussed.This publication has 22 references indexed in Scilit:
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