Effect of electron heating on RTS in deep submicron n-MOSFET's
- 30 September 1992
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 19 (1-4) , 751-754
- https://doi.org/10.1016/0167-9317(92)90537-2
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
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- Internal probing of submicron FETs and photoemission using individual oxide trapsIBM Journal of Research and Development, 1990
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984