A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHz
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 85 (0149645X) , 383-386
- https://doi.org/10.1109/mwsym.1985.1131990
Abstract
An interdigitated silicon bipolar transistor with 0.5 micrometer emitter width and 2 micrometer emitter-emitter pitch has been fabricated which has a measured Fmax greater than 30 GHz. Low phase noise YIG-tuned oscillators with fundamental frequency bands of 4-18 and 8-22 GHz have been demonstrated using this transistor.Keywords
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