Growth of vertical-cavity surface-emitting laser structures on GaAs (311)B substrates by metalorganic chemical vapor deposition
- 23 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (25) , 3395-3397
- https://doi.org/10.1063/1.119182
Abstract
Vertical-cavity surface-emitting laser (VCSEL) structures have been grown on GaAs (311)B substrates by metalorganic chemical vapor deposition. C-doped GaAs and AlAs layers with smooth surface morphology and a hole concentration of 1018 cm−3 were obtained by optimizing the growth conditions; these conditions contributed to high-quality p-type distributed Bragg reflectors (DBRs). The devices on the (311)B substrates exhibited a threshold current of 9.6 mA, voltage of 2.1 V, and maximum power of 4.1 mW at a 20 μm φ size; these characteristics are similar to those obtained on (100) substrates. The polarization was aligned to [2̄33̄].Keywords
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