Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study
- 1 August 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 191 (4) , 697-710
- https://doi.org/10.1016/s0022-0248(98)00354-6
Abstract
No abstract availableKeywords
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