A selective dry-etch technique for GaAs MESFET gate recessing
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (10) , 1580-1584
- https://doi.org/10.1109/16.7356
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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