A SIMS study on the secondary ion yield in boron implanted silicon using a low energy primary oxygen beam
- 1 March 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 85 (1) , 399-403
- https://doi.org/10.1016/0168-583x(94)95853-x
Abstract
No abstract availableKeywords
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