On the susceptibility of heavily doped SI:P
- 30 June 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 30 (10) , 597-600
- https://doi.org/10.1016/0038-1098(79)90104-2
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron resonance linewidth anisotropy of CsMnCl3Solid State Communications, 1978
- Enhanced spin susceptibility in phosphorus-doped siliconPhilosophical Magazine, 1974
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. II. A Unified TreatmentPhysical Review B, 1973
- Absolute Spin Susceptibilities and Other ESR Parameters of Heavily Doped-Type Silicon. I. Metallic SamplesPhysical Review B, 1972
- Electron-Spin-Resonance Studies of Heavily Phosphorus-Doped SiliconPhysical Review B, 1971
- Electron paramagnetic resonance studies on copper(II) benzoateCanadian Journal of Chemistry, 1969
- Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon. III. Absorption IntensityJournal of the Physics Society Japan, 1969
- Model for the Metal-Nonmetal Transition in Impure SemiconductorsReviews of Modern Physics, 1968
- Effects on the NMR Properties of the Metal-Nonmetal Transistion in Impure SemiconductorsReviews of Modern Physics, 1968
- Thermal and magnetic properties of CuSO4.5H2O and CuSeO4.5H2O below 1°KPhysica, 1962