Unified Model for Structure Transition and Electrical Properties of InAs (001) Surfaces Studied by Scanning Tunneling Microscopy
- 1 October 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (10A) , L1423-1426
- https://doi.org/10.1143/jjap.33.l1423
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1994
- Energetics of GaAs(100)-(2×4) and -(4×2) reconstructionsPhysical Review Letters, 1993
- Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopyPhysical Review B, 1993
- Influence of monomolecular steps on the first-order structure transition of an InAs(001) surfacePhysical Review Letters, 1993
- Energetics of As dimers on GaAs(001) As-rich surfacesPhysical Review Letters, 1993
- Structure and composition of GaAs(001) surfacesPhysical Review Letters, 1992
- First-order surface-structure transition on the (001) InAs surface studied with improved high-energy electron reflectivity measurementsPhysical Review B, 1992
- Compensating surface defects induced by Si doping of GaAsPhysical Review Letters, 1991
- Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfacesPhysical Review Letters, 1990
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988