Step Motion and Structure Transition on InAs and GaAs (001) Surfaces Observed by Scanning Tunneling Microscopy
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.716
Abstract
The step motion and structure transition on InAs and GaAs (001) surfaces are directly observed by scanning tunneling microscopy at high temperatures. A stable (2×4) structure is observed for the InAs surface even at temperatures high enough to cause the motion of monomolecular steps and kinks. At higher temperatures, domains with an In stable (4×2) structure (As desorbed region) are clearly observed surrounded by As stable (2×4) structures. These results differ from those for GaAs surfaces and indicate strong lateral interaction in (2×4) structures on InAs.Keywords
This publication has 24 references indexed in Scilit:
- Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopyPhysical Review B, 1993
- Scanning tunneling microscopy study of molecular-beam epitaxial growth of GaAs on GaAs(001)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Influence of monomolecular steps on the first-order structure transition of an InAs(001) surfacePhysical Review Letters, 1993
- Phase transition on III-V compound semiconductor surfaces observed by an improved RHEED techniqueJournal of Crystal Growth, 1993
- Structure and composition of GaAs(001) surfacesPhysical Review Letters, 1992
- Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopyPhysical Review Letters, 1991
- Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxyApplied Physics Letters, 1991
- The meandering of steps on GaAs(100)Journal of Crystal Growth, 1989
- Commensurate and incommensurate phase transitions of the (001) InAs surface under changes of bulk lattice constant, As chemical potential, and temperaturePhysical Review Letters, 1987
- Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transferJournal of Vacuum Science and Technology, 1981