Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy
- 15 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (4) , 2807-2810
- https://doi.org/10.1103/physrevb.48.2807
Abstract
Step motion and As desorption on InAs(001) surfaces are directly observed by scanning tunneling microscopy at high temperatures. Stable (2×4) structures are observed even at temperatures high enough to cause the motion of monomolecular steps and kinks. At higher temperatures, domains with dark contrast (As-desorbed regions) are clearly observed. These results differ from those for GaAs surfaces and indicate strong lateral interaction in (2×4) structures on InAs.Keywords
This publication has 24 references indexed in Scilit:
- Structure and composition of GaAs(001) surfacesPhysical Review Letters, 1992
- First-order surface-structure transition on the (001) InAs surface studied with improved high-energy electron reflectivity measurementsPhysical Review B, 1992
- Reflection high energy electron diffraction characteristic absences in GaAs(100) (2×4)–As: A tool for determining the surface stoichiometryJournal of Vacuum Science & Technology B, 1990
- Surface reconstructions of GaAs(100) observed by scanning tunneling microscopyPhysical Review B, 1990
- Structure of GaAs(001)Determined by Scanning Tunneling MicroscopyPhysical Review Letters, 1988
- Atomic structure of GaAs(100)-(2×1) and (2×4) reconstructed surfacesJournal of Vacuum Science & Technology A, 1987
- Commensurate and incommensurate phase transitions of the (001) InAs surface under changes of bulk lattice constant, As chemical potential, and temperaturePhysical Review Letters, 1987
- Stoichiometry effects on surface properties of GaAs{100} grown in situ by MBESurface Science, 1980
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AESSurface Science, 1978