An evaluation of HEMT potential for millimeter-wave signal sources using interpolation and harmonic balance techniques
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 1 (12) , 365-367
- https://doi.org/10.1109/75.103852
Abstract
A large-signal analysis method based on an harmonic balance technique and a 2-D cubic spline interpolation function has been developed and applied to the prediction of InP-based InAlAs/InGaAs heterostructure HEMT oscillator performance for frequencies extending up to the submillimeter-wave range. The large-signal analysis method uses a limited number of DC and small-signal S-parameter data and allows the accurate characterization of HEMT large-signal behavior. The method has been validated experimentally using load-pull measurement. Oscillation frequency, power performance, and load requirements are discussed, with an operation capability of 300 GHz predicted using state-of-the-art devices (f/sub max/ approximately 450 GHz).Keywords
This publication has 8 references indexed in Scilit:
- High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band monolithic mixer using InAlAs/InGaAs HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT OscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991
- W-band monolithic oscillator using InAlAs/InGaAs HEMTElectronics Letters, 1990
- W-band InGaAs HEMT low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Large Signal GaAs MESFET Oscillator DesignIEEE Transactions on Microwave Theory and Techniques, 1979
- Design and Performance of X-Band Oscillators with GaAs Schottky-Gate Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 1975