High efficiency monolithic Ka-band oscillators using InAlAs/InGaAs HEMTs
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 263-266
- https://doi.org/10.1109/gaas.1991.172687
Abstract
The performance of monolithic integrated oscillators using submicron InAlAs/InGaAs HEMTs (high electron mobility transistors) at 35 GHz is presented. Two different types of feedback schemes were employed showing distinct bias tuning features. A large-signal analysis was performed to analyze their power characteristics. The dual feedback oscillator had an output power of 8.2 mW and showed a high DC-to-RF efficiency of 36% at 35.6 GHz.<>Keywords
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